♦   LTE reception for cell phones

♦   Tablet PCs and RF front-end modules



♦   Excellent Noise Figure: 0.6dB/0.9dB

♦   High Gain:19dB/18dB

♦   Bypass mode gain: -6dB

♦   Wide band, cover middle and high bands:1700MHz~2700MHz

♦   High Gain mode current: 5.3 mA

♦   Bypass mode current

♦   ESD protection on all pins (HBM > 2 kV)

♦   Small package: 1.1 x 0.7 x 0.6mm



The HS1412H is a LTE Low Noise Amplifier (LNA) which can be applied for middle and high bands LTE, that is from 1700MHz to 2700MHz. It has high gain mode and bypass mode controlled by the enable logic signal. The output matching components are integrated inside the device. Only one external input matching inductor is required. It can deliver >18dB Gain with a noise figure (NF) of 0.6/0.9dB. The HS1412H is manufactured in a compact, 6- pin 1.1 x 0.7 x 0.6 mm package. A functional block diagram is shown in Figure 1. The pin configuration and package are shown in Figure 2.

Block Diagram



Pinout (Top View)


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