♦  LTE reception for cell phones

♦  Tablet PCs and RF front-end modules



♦  Excellent Noise Figure: 0.65dB

♦  High Gain:19.5dB

♦  Bypass mode gain: -4dB

♦  Operating frequency from 700 MHz to 1000 MHz

♦  High Gain mode current: 7.5 mA

♦  Bypass mode current

♦  ESD protection on all pins (HBM > 2 kV)

♦  Small package: 1.1 x 0.7 x 0.6mm



The HS1412L is a a Low Noise Amplifier (LNA) for low band LTE (700MHz~1GHz) applications. It has high gain mode and bypass mode controlled by the enable logic signal. The output matching components are integrated inside the device. Only one external input matching inductor is required. It can deliver 19.5dB Gain with a superior noise figure (NF) of 0.65dB. The HS1412L is manufactured in a compact, 6- pin 1.1 x 0.7 x 0.6 mm package. A functional block diagram is shown in Figure 1. The pin configuration and package are shown in Figure 2.


Block Diagram



Pinout (Top View)


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